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Wafer Edge Defect Inspection with Sub-Micrometer Sensitivity PDF
News - Component Test
Monday, 09 January 2012 08:08

np_mc_ebi_gen3Wafer Edge Defect Inspection with Sub-Micrometer Sensitivity

09 January 2012 - NanoPhotonics released the next generation (Gen 3) edge-inspection technology. The technology is ready for applications according to the 22 nm node where sub micron sensitivity inspection technology for both wafer edge and wafer back-side is required. A first unit has been shipped to a leading wafer manufacturer in November 2011.
The MC EBI integrated metrology module consists of the EDI Gen 3 Edge Defect Inspection module and a laser scattering BSI Back-Side Inspection module. Both devices are housed in a bolts compatible module. The CCD line scan camera based EDI provides 1µm sensitivity on the wafer bevel and 0.5 µm sensitivity on top flat region of the wafer. The BSI module delivers sensitivity below 0.2 µm and haze information as well. A powerful Automatic Defect Classification (ADC) automatically classifies edge and backside defects onto more than 20 configurable defect classes enabling automatic sorting according to user defined grading rules.
The Bolts compatible MC EBI Gen 3 system can be integrated as an Integrated Metrology Module to a wafer sorter or process tool. It can also be configured as stand-alone system comprising up to two MC EBI modules for high throughput. Typical applications are outgoing/incoming quality control of bare wafers or edge and backside inspection in the litho area during device manufacturing.

www.nanophotonics.de
 

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